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Nexperia extends market-leading low RDS(on) MOSFET performance with the release of its 0.57 mΩ product in LFPAK56
Nexperia announced the release of its lowest-ever RDS(on) power MOSFET. Already recognised as the industry-leader in low voltage, low RDS(on) devices, the PSMNR51-25YLH launched today sets a new standard of 0.57 mΩ at 25 V.

Utilising Nexperia’s unique NextPowerS3 technology, this market-leading performance is offered without compromising other important parameters such as maximum drain current (ID(max)), Safe Operating Area (SOA) or gate charge QG.

Very low RDS(on) devices are required in many applications such as ORing, hot-swap operation, synchronous rectification, motor control and battery protection, to reduce I²R losses and increase efficiency. However, some competing devices with similar RDS(on) values suffer from reduced SOA – a measure of the ruggedness of the MOSFET – and reduced ID(max)) ratings due to shrinking cell-pitches. Nexperia’s PSMNR51-25YLH MOSFET offers a maximum drain current rating up to 380 Amps. This parameter is especially important in motor control applications where motor-stall can result in very high current surges for short periods, which the MOSFET must withstand for safe and reliable operation. Some competitors provide only computed ID(max) whereas Nexperia demonstrates continuous current capability up to 380 Amps.

The device is packaged in LFPAK56, Nexperia’s 5mm x 6mm Power-SO8 compatible package, offering a high performance copper-clip construction which absorbs thermal stresses, increasing quality & lifetime reliability.

Comments Steven Waterhouse, product manager for Power MOSFETs at Nexperia: “Our latest NextPowerS3 MOSFETs mean power engineers now have more options than ever before to build market leading products – batteries can last longer, motors can deliver more torque, servers can be more reliable.”

Typical applications include: battery protection; brushless DC (BLDC) motor control (full bridge, 3-Phase topologies); server power for ORing, hotswap operation and synchronous rectification.

More information on the new low RDS(on) MOSFETS, including product specs and datasheets is available at www.nexperia.com/nextpowers3  

2020012902 / 29.01.2020 / Komponenty elektroniczne / NEXPERIA /

USB4 ESD devices from Nexperia provide optimum balance of protection and performance
TrEOS based protection offers industry-leading insertion and return loss to help meet tight system budgets

Nexperia launches new portfolio of application specific MOSFETs (ASFETs) for automotive airbags
Provides excellent transient linear mode performance using new SOA trench technology in LFPAK packaging providing designers with a smaller and more reliable choice.

Nexperia establishes new Application Specific FET category to deliver optimized performance
‘ASFETs’ feature MOSFET parameters tailored for particular applications

Nexperia launches industry-first LED drivers in DFN package with side-wettable flanks
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Nexperia launches Common Mode Filter with ESD protection for HDMI2.1 and DisplayPort
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”.

New automotive TrEOS ESD protection from Nexperia combines high signal integrity, low clamping voltage and high surge robustness
Industry-benchmark performance devices now AEC-Q101 qualified - protecting infotainment, multimedia and ADAS systems.

Nexperia launches ‘Power Live’ July 2nd & 3rd 2020
Nexperia, the expert in essential semiconductors, today announced ‘Power Live’ a virtual conference on the 2nd and 3rd of July which will cover a wide range of subjects related to power electronics including GaN devices, Silicon Germanium (SiGe) rectifiers, automotive applications and packaging technology.

Nexperia delivers widest range of AEC-Q101 discretes in miniature, leadless rugged DFN packages
Nexperia today announced the industry’s widest portfolio of automotive-qualified discretes in space-saving, thermally-efficient, AOI-compatible DFN (Discrete Flat No leads) packages. The AEC-Q101 range of devices available cuts across all Nexperia’s product groups and includes switching, Schottky, Zener and protection diodes, bipolar junction transistors (BJTs), N- and P-channel MOSFETs, resistor-equipped transistors and LED drivers.

Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
Next-gen GaN technology targets automotive, 5G and datacenter applications; Devices available packaged in TO-247 and innovative Copper Clip SMD

Silicon Germanium (SiGe) rectifiers from Nexperia combine cutting-edge high efficiency, thermal stability and space-savings
AEC-Q101 approved devices with 120 V, 150 V, and 200 V combine best attributes of Schottky and fast recovery diodes

Nexperia launches P-channel MOSFETs in robust, space-saving LFPAK56 package
Nexperia, the expert in essential semiconductors, has launched industry’s first family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are an ideal replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels. The new products are available in 30 V – 60 V, with RDS(on) down to 10 mΩ (30 V)

Ultra-tiny MOSFETs from Nexperia are 36% smaller with lowest RDS(on)
Nexperia has launched a range of MOSFETs in the ultra-small DFN0606 package for mobile and portable applications including wearables. The devices also offer the lowest RDS(on) for their size and employ the commonly used pitch of 0.35 mm to simplify PCB assembly processes.

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